China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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p channel vishay power mosfet

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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p channel vishay power mosfet

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PDP SWITCH IRFB4229PbF Features • Advanced Process Technology • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications ... 2024-12-09 22:38:51
... and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82784 Applications • DC/DC converters and Off-Line UPS • Distributed ... 2024-12-09 22:41:27
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are ... 2024-12-09 22:41:27
IR2011STRPBF Computer IC Chip HIGH AND LOW SIDE DRIVER high speed powerMOSFET driver Features ·Floating channel designed for bootstrap operation Fully ... 2024-12-09 22:46:48
Features ► Integrated half-bridge package ► Reduces the part count by half ► Facilitates better PCB layout ► Key parameters optimized for Class-D ... 2024-12-09 22:38:38
Small Signal MOSFET −8.0 V, −3.7 A, Single P−Channel, SOT−23 Features • Leading Trench Technology for Low RDS(on) • −1.8 V Rated for Low Voltage Gate ... 2024-12-09 22:41:27
Stock Offer (Hot Sell) Part No. Quantity Brand D/C Package MCIMX535DVV1C 1066 FREESCALE 14+ BGA MCIMX6S7CVM08AC 769 FREESCALE 16+ BGA MCP100T-270I/TT ... 2024-12-09 22:41:27
AON7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AON7403/L uses advanced trench technology to provide excellent RDS... 2024-12-09 22:38:51
STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH™ IGBT General Features TYPE VCES VCE(sat) (Max) @25°C IC @100°C STGW20NC60VD 600 V < 2.5 ... 2024-12-09 22:38:51
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description The ISL9V3040D3S, ... 2024-12-09 22:38:51
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