AON7403 Power Mosfet P Channel Enhancement Mode Field Effect Transistor
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AON7403 P-Channel Enhancement Mode Field Effect Transistor
General Description The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AON7403 and AON7403L are electrically identical. -RoHS Compliant -AON7403L is Halogen Free
Features VDS (V) = -30V ID = -8A (VGS = -10V) RDS(ON) < 18mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -4.5V)
Absolute Maximum Ratings TA=25°C unless otherwise noted
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. G. The maximum current rating is limited by bond-wires.
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