IR2011S 35ns Low Side Driver , High Speed Power Mosfet Driver 10V - 20V

IR2011STRPBF Computer IC Chip HIGH AND LOW SIDE DRIVER high speed powerMOSFET driver

Features

·Floating channel designed for bootstrap operation Fully operational up to +200V Tolerant to negative       transient voltage, dV/dt immune

·Gate drive supply range from 10V to 20V

·Independent low and high side channels

·Input logicHIN/LIN active high

·Undervoltage lockout for both channels

·3.3V and 5V input logic compatible

·CMOS Schmitt-triggered inputs with pull-down

·Matched propagation delay for both channels ·Also available LEAD-FREE (PbF)

Applications

·Audio Class D amplifiers ·High power DC-DC SMPS converters

·Other high frequency applications

Description

       The IR2011 isa high power, high speed powerMOSFET driver with independenthigh and low side referenced output channels, idealforAudio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Propri- etary HVIC and latch immune CMOS technologies enable ruggedized monolithic con- struction.