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MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor

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City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor

Model Number MMBF170
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 8600pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description N-Channel 60 V 500mA (Ta) 300mW (Ta) Surface Mount SOT-23-3
Drain-Source Voltage 60 V
Drain-Gate Voltage (RGS < 1MW) 60 V
Gate-Source Voltage ± 20 V
Drain Current - Continuous 500 mA
Operating and Storage Temperature Range -55 to 150 °C
Detailed Product Description

 

BS170 / MMBF170

N-Channel Enhancement Mode Field Effect Transistor

 

General Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

 

Features

  • High density cell design for low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability.

Absolute Maximum Ratings TA = 25°C unless otherwise noted

SymbolParameterBS170MMBF170Unit
VDSSDrain-Source Voltage60V
VDGRDrain-Gate Voltage (RGS < 1MW)60V
VGSSGate-Source Voltage± 20V
ID

Drain Current - Continuous

                      - Pulsed

500500mA
1200800mA
PD

Maximum Power Dissipation

Derate Above 25°C

830300mW
6.62.4mW/°C
TJ ,TSTGOperating and Storage Temperature Range-55 to 150°C
TLMaximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds300°C
  THERMAL CHARACTERISTICS
RθJAThermal Resistacne, Junction-to-Ambient150417°C/W

 

 

               

                 Switching Test Circuit.                                   Switching Waveforms.

 

 

 

 

 

 

Product Tags: power mosfet ic   silicon power transistors  
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