MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor

BS170 / MMBF170

N-Channel Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features

• High density cell design for low R_DS(ON).
• Voltage controlled small signal switch.
• Rugged and reliable.
• High saturation current capability.

Absolute Maximum Ratings T_A = 25°C unless otherwise noted

                 Switching Test Circuit.                                   Switching Waveforms.