MMBF170 Power Mosfet Transistor , N - Channel Enhancement Mode Field Effect Transistor
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BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor
General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Switching Test Circuit. Switching Waveforms.
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| Product Tags: power mosfet ic silicon power transistors | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
