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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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power mosfet ic

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...Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This ... 2024-12-09 22:41:27
...Power Mosfet IC IRF1404PBF Advanced Ultra Low On-Resistance Description Seventh Generation HEXFETÆ Power MOSFETs from International Rectifier ... 2024-12-09 22:38:38
..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are ... 2024-12-09 22:38:38
...Power MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single FEATURES • ... 2024-12-09 22:38:51
... = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the ... 2024-12-09 22:38:51
... l Fast Switching l Fully Avalanche Rated Key Specifications: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced ... 2024-12-09 22:38:38
... Specifically designed for high current, high reliability applications, this HEXFET® Power MOSFET utilizes the latest processing techniques and ... 2024-12-09 22:38:51
BD442 PNP power transistor high power mosfet transistors Features ■ PNP transistor Applications ■ Linear and switching industrial equipment Descriptio... 2024-12-09 22:41:27
N-Channel 150-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETS • New Low Thermal Resistance ... 2024-12-09 22:41:27
FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using ... 2024-12-09 22:38:51
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