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IRFP9240PBF Power Mosfet Transistor P-Channel MOSFET power mosfet ic

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City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

IRFP9240PBF Power Mosfet Transistor P-Channel MOSFET power mosfet ic

Model Number	IRFP9240PBF
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	20pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	9000pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	P-Channel 200 V 12A (Tc) 150W (Tc) Through Hole TO-247AC
Drain-Source Voltage	- 200 V
Gate-Source Voltage	± 20 V
Pulsed Drain Current	- 48 A
Linear Derating Factor	1.2 W/°C
Single Pulse Avalanche Energy	790 mJ
Maximum Power Dissipation	150 W

Detailed Product Description

IRFP9240, SiHFP9240

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

PRODUCT SUMMARY

V_DS (V)	- 200 V
R_DS(on) (Max.) (Ω)	V_GS = - 10 V	0.50
Q_g (Max.) (nC)	44
Q_gs (nC)	7.1
Q_gd (nC)	27
Configuration	Single

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted

PARAMETER			SYMBOL	LIMIT	UNIT
Drain-Source Voltage			V_DS	- 200	V
Gate-Source Voltage			V_GS	± 20	V
Continuous Drain Current	V_GS at - 10 V	T_C = 25 °C	I_D	- 12	A
Continuous Drain Current	V_GS at - 10 V	T_C = 100 °C	I_D	- 7.5	A
Pulsed Drain Current ^a			I_DM	-48	A
Linear Derating Factor				1.2	W/°C
Single Pulse Avalanche Energy ^b			E_AS	790	mJ
Repetitive Avalanche Current ^a			I^AR	- 12	A
Repetitive Avalanche Energy ^a			E^AR	15	mJ
Maximum Power Dissipation		T_C = 25 °C	P_D	150	W
Peak Diode Recovery dV/dt ^c			dV/dt	- 5.0	V/ns
Operating Junction and Storage Temperature Range			T_J, T_stg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)		for 10 s		300 ^d	°C
Mounting Torque		6-32 or M3 screw		10	lbf·in
Mounting Torque		6-32 or M3 screw		1.1	N·m

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD = - 50 V, starting T_J = 25 °C, L = 8.2 mH, R_G = 25 Ω, I_AS = - 12 A (see fig. 12).

c. I_SD ≤ - 12 A, dI/dt ≤ 150 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.

d. 1.6 mm from case.

Stock Offer (Hot Sell)

Part no.

Quantity

Brand

D/C

Package

MOC3020	4000	FSC	14+	DIP
MX25L1005CMI-12G	4000	MXIC	14+	SOP-8
NFM18CC222R1C3D	4000		14+	SMD
OB2269AP	4000	OB	16+	DIP8
P6SMB22A	4000	ON	16+	SMB
PIC18F2550-I/SP	4000	MICROCHIP	13+	DIP
RS1M	4000	PLINGSEMI	15+	SMA
SD4841	4000	SILAN	16+	DIP
SFH610A-3	4000	VISHAY	16+	DIP-4
SK110	4000	TSC	14+	SMB
SMCJ30A	4000	VISHAY	14+	VISHAY
SN65HVD11DR	4000	TI	14+	SOP-8
SN75176BP	4000	TI	16+	DIP
SUM65N20-30	4000	VISHAY	16+	TO-263
TS5A3159DBVR	4000	TI	13+	SOT23-6
H11F1	4001	FSC	15+	DIP-6
PS2561	4001	NEC	16+	SOP4
SP202ECP	4001	SIPEX	16+	DIP
EXB841	4002	FUJI	14+	ZIP-13
PC451	4002	SHARP	14+	SOP-4
SFH610A-3	4002	VISKAY	14+	DIP-4
HT9032C	4008	HOLTEK	16+	SOP
MJE15033G	4008	ON	16+	TO-220
LF347	4022	TI	13+	SOP14
1.5KE300CA	8000	VISHAY	15+	DO-201AD
ICS501	4100	ICS	16+	SOP8
IRFIZ34N	4100	IR	16+	TO-220F
NCP1396ADR2G	4100	ON	14+	SOP15
ZTX712	4100	ZETEX	14+	TO-92
MBR20200	4110	ON	14+	TO-220

Product Tags: multi emitter transistor silicon power transistors

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