IRLL110TRPBF Power Mosfet ic Transistor electrical ic switching power mosfet
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IRLL110, SiHLL110 Power MOSFET
PRODUCT SUMMARY
FEATURES • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Lead (Pb)-free Available
DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness.
The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 25 mH, RG = 25 Ω, IAS = 1.5 A (see fig. 12). c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material).
Stock Offer (Hot Sell)
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