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ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor

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ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor

Model Number ISL9V3040S3ST
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 10000pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description IGBT 430V 21A TO263AB
Collector to Emitter Breakdown Voltage 430 V
Gate to Emitter Voltage Continuous ±10 V
Operating Junction Temperature -40 to 175 °C
Storage Junction Temperature -40 to 175 °C
Max Lead Temp for Soldering (Package Body for 10s) 260 °C
Electrostatic Discharge Voltage at 100pF, 1500Ω 4 kV
Detailed Product Description

 

ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT

 

General Description

The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263), and TO-262 and TO- 220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components.

 

EcoSPARK™ devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information.

Formerly Developmental Type 49362

 

Applications

• Automotive Ignition Coil Driver Circuits

• Coil- On Plug Applications

 

Features

• Space saving D-Pak package availability

• SCIS Energy = 300mJ at TJ = 25℃ 

• Logic Level Gate Drive

 

Device Maximum Ratings TA = 25°C unless otherwise noted

SymbolParameterRatingsUnits
BVCERCollector to Emitter Breakdown Voltage (IC = 1 mA)430V
BVECSEmitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)24V
ESCIS25At Starting TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy300mJ
ESCIS150At Starting TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy170mJ
IC25Collector Current Continuous, At TC = 25°C, See Fig 921A
IC110Collector Current Continuous, At TC = 110°C, See Fig 917A
VGEMGate to Emitter Voltage Continuous±10V
PDPower Dissipation Total TC = 25°C150W
 Power Dissipation Derating TC > 25°C1.0W/°C
TJOperating Junction Temperature Range-40 to 175°C
TSTGStorage Junction Temperature Range-40 to 175°C
TLMax Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)300°C
TpkgMax Lead Temp for Soldering (Package Body for 10s)260°C
ESDElectrostatic Discharge Voltage at 100pF, 1500Ω4kV

 

Package                                                                                Symbol

         

 

 

 

 

Stock Offer (Hot Sell)

Part No.QuantityBrandD/CPackage
SGB15N60HS14664 14+TO-263
SPB20N60S512954 12+TO-263
TLE4271-2G13546 06+TO-263
T2P50E11024ON16+TO-263
RJP30H2ADPE-00-J316680RENESAS15+TO-263
SI8050JD37152SANKEN13+TO-263
SI-8050SD8028SANKEN13+TO-263
STB20NM50T42057ST12+TO-263
STB30NF10T422440ST11+TO-263
STGB7NC60HDT46436ST16+TO-263
STPS20L45CG10688ST16+TO-263
STTH3002CG11196ST15+TO-263
T1235-800G-TR16188ST05+TO-263
T1635-700G-TR15872ST10+TO-263
T1635-800G-TR11480ST16+TO-263
T835H-6G-TR17672ST11+TO-263
TLE4271G12806INFIENON16+TO-263
SPB21N50C38860 16+TO-263
TOP244R-TL16428POWER16+TO-263
STB140NF75T418152ST13+TO-263
STB180N55F318716ST16+TO-263
STPS30L30CG8124ST13+TO-263
STPS30L60CW30036ST04+TO-263
TOP244FN16330POWER15+TO-262
TLE4270D8006 16+TO-252-5
RFD14N05LSM15566FAIRCHILD16+TO-252
RFD16N05LSM12150FAIRCHILD10+TO-252
RFD3055LESM9A7934FAIRCHILD16+TO-252
TJ3965GRS-1.27788HTC16+TO-252
SPD03N60C313272 11+TO-252

 

 

 

 

Product Tags: multi emitter transistor   silicon power transistors  
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