IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor

Model Number	IRFB4229PBF
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	20pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	9000pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	N-Channel 250 V 46A (Tc) 330W (Tc) Through Hole TO-220AB
Gate-to-Source Voltage	±30 V
Pulsed Drain Current	180 A
Repetitive Peak Current	91 A
Linear Derating Factor	2.2 W/°C
Operating Junction and Storage Temperature	-40 to + 175°C
Soldering Temperature for 10 seconds	300°C

Detailed Product Description

PDP SWITCH IRFB4229PbF

Features

• Advanced Process Technology

• Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications

• Low E_PULSE Rating to Reduce Power Dissipation in PDP Sustain,

Energy Recovery and Pass Switch Applications

• Low Q_G for Fast Response

• High Repetitive Peak Current Capability for Reliable Operation

• Short Fall & Rise Times for Fast Switching

• 175°C Operating Junction Temperature for Improved Ruggedness

• Repetitive Avalanche Capability for Robustness and Reliability

Key Parameters

V_DS min	250	V
V_{DS (Avalanche)} typ.	300	V
R_DS(ON) typ. @ 10V	38	mΩ
I_RP max @ T_C= 100°C	91	A
T_J max	175	°C

Description

This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E_PULSErating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

	Parameter	Max.	Units
V_GS	Gate-to-Source Voltage	±30	V
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ 10V	46	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ 10V	33	A
I_DM	Pulsed Drain Current	180	A
I_RP @ T_C = 100°C	Repetitive Peak Current	91	A
P_D @T_C = 25°C	Power Dissipation	330	W
P_D @T_C = 100°C	Power Dissipation	190	W
	Linear Derating Factor	2.2	W/°C
T_JT_STG	Operating Junction and Storage Temperature Range	-40 to + 175	°C
	Soldering Temperature for 10 seconds	300	°C
	Mounting Torque, 6-32 or M3 Screw	10lbin (1.1Nm)	N

Stock Offer (Hot Sell)

Part no.

Quantity

Brand

D/C

Package

HIP4080AIBZT	3925	INTERSIL	15+	SOP
TNY266PN	3970	POWER	16+	DIP7
LM7912CT	3990	NS	16+	TO-220
HCNW4503	3991	AVAGO	14+	SOP8DIP8
ICL7650SCBA	3996	INTERSIL	14+	SOP-8
LM2575HVT-ADJ	3997	NS	14+	TO-220
MUR3020PT	3997	ON	16+	TO-3P
IRFR5305	3998	IR	16+	TO-252
MJ802	3998	ON	13+	TO-3
LBAT54XV2T1G	3999	ON	15+	SOD-523
VN10LFTA	3999	ZETEX	16+	SOT23
1N5341B	4000	ON	16+	CASE17
1N5343B	4000	ON	14+	DO-02
2SC2383	4000	TOSHIBA	14+	TO-92
2SC3807	4000	SANYO	14+	TO-126
2SK170BL	4000	TOSHIBA	16+	TO-92
74HC174D	4000		16+	SOP-16
74LVC245AD	4000		13+	SOP
AD8572ARZ	4000	AD	15+	SOP8
AT24C512C-SSHD-T	4000	ATEML	16+	SOP8
BCV48	4000		16+	SOT-89
BD137	4000	ST	14+	TO-126
BTS721L1	4000		14+	SOP-20
CD4027BE	4000	TI	14+	DIP
CPC1017N	4000	CLARE	16+	SOP4
IRF7307	4000	IR	16+	SOP8
IRFR210	4000	IR	13+	SOT-252
LT1963AEST-3.3	4000	LT	15+	SOT-223
MIC4424BN	4000	MICREL	16+	DIP8
MICROSMD050F-2	4000	TYCO	16+	SMD

Product Tags: power mosfet ic silicon power transistors

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