IRFI4020H-117P Power Mosfet Transistor DIGITAL AUDIO MOSFET 200 V

Features

► Integrated half-bridge package

► Reduces the part count by half

► Facilitates better PCB layout

► Key parameters optimized for Class-D audio amplifier applications

► Low RDS(ON) for improved efficiency

► Low Qg and Qsw for better THD and improved efficiency Low Qrr for better THD and lower EMI

► Can delivery up to 300W per channel into 8Ω load in half-bridge configuration amplifier

► Lead-free package

Description

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.