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FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET

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City: shenzhen

Country/Region:china

Tel:86-755-88367702

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FQP30N06 Power Mosfet Transistor power mosfet ic N-Channel MOSFET

Model Number FQP30N06
Certification new & original
Place of Origin original factory
Minimum Order Quantity 20pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 6900pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description N-Channel 60 V 30A (Tc) 79W (Tc) Through Hole TO-220-3
Drain-Source Voltage 60 V
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy 280 mJ
Avalanche Current 30 A
Repetitive Avalanche Energy 7.9 mJ
Operating and Storage Temperature -55 to +175 °C
Detailed Product Description

 

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FQP30N06

60V N-Channel MOSFET

 

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

 

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

 

Features

• 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V

• Low gate charge ( typical 19 nC)

• Low Crss ( typical 40 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

 

Absolute Maximum Ratings TC = 25°C unless otherwise noted

SymbolParameterFQP30N06Units
VDSSDrain-Source Voltage60V
ID

Drain Current - Continuous (TC = 25°C)

                    - Continuous (TC = 100°C)

30A
21.3A
IDMDrain Current - Pulsed (Note 1)120A
VGSSGate-Source Voltage± 25V
EASSingle Pulsed Avalanche Energy (Note 2)280mJ
IARAvalanche Current (Note 1)30A
EARRepetitive Avalanche Energy (Note 1)7.9mJ
dv/dtPeak Diode Recovery dv/dt (Note 3)7.0V/ns
PD

Power Dissipation (TC = 25°C)

                       - Derate above 25°C

79W
0.53W/°C
TJ, TSTGOperating and Storage Temperature Range-55 to +175°C
TLMaximum lead temperature for soldering purposes, 1/8" from case for 5 seconds300°C

 

 

 

 

 

Product Tags: multi emitter transistor   silicon power transistors  
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