NTR2101PT1G Power Mosfet Transistor Program ic Chip Memory IC

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Brand Name	ON
Model Number	NTR2101PT1G
Certification	Original Factory Pack
Place of Origin	Malaysia
Minimum Order Quantity	100pcs
Price	Negotiation
Payment Terms	T/T, Western Union,PayPal
Supply Ability	30000PCS
Delivery Time	1 Day
Packaging Details	3000/REEL
Description	P-Channel 8 V 3.7A (Ta) 960mW (Ta) Surface Mount SOT-23-3 (TO-236)
Temperature Range	–40°C to +125°C
Payment Term	T/T, Paypal, Western Union
Voltage	1.8V/2.5V/4.5V
Current	3.7A
Package	SOT-23
Factory Package	3000/REEL

Detailed Product Description

Small Signal MOSFET −8.0 V, −3.7 A, Single P−Channel, SOT−23

Features

• Leading Trench Technology for Low RDS(on)

• −1.8 V Rated for Low Voltage Gate Drive

• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)

• Pb−Free Package is Available

Applications

• High Side Load Switch

• DC−DC Conversion

• Cell Phone, Notebook, PDAs, etc.

ABSOLUTE MAXIMUM RATINGS(1)

Drain−to−Source Voltage VDSS −8.0 V

Gate−to−Source Voltage VGS ±8.0 V

Continuous Drain Current (Note 1) t ≤ 10 s TA = 25°C ID −3.7 A TA = 70°C −3.0

Power Dissipation (Note 1) t ≤ 10 s PD 0.96 W

Pulsed Drain Current tp = 10 s IDM −11 A

Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C

Source Current (Body Diode) IS −1.2 A

Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C

PART OF STOCK

Product Tags: power mosfet ic silicon power transistors

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