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power mosfet driver ic
Selling leads
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...Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This ...
2024-12-09 22:41:27
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...Power Mosfet IC IRF1404PBF Advanced Ultra Low On-Resistance Description Seventh Generation HEXFETÆ Power MOSFETs from International Rectifier ...
2024-12-09 22:38:38
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...Power MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single FEATURES • ...
2024-12-09 22:38:51
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... = - 10 V 0.50 Qg (Max.) (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the ...
2024-12-09 22:38:51
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... dual full-bridge motor driver with an advanced protection system. Because of the low RDS (on) of the H-Bridge MOSFET sand intelligent gate drive ...
2024-12-09 22:37:32
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...Mosfet Power Transistor MOSFET 100V N-Channel PowerTrench Features Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A Advanced Package and Silicon ...
2024-12-09 22:37:47
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... Circuits Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, ...
2024-12-09 22:41:27
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...Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET 1 Features Optimized for 5-V Gate Drive Ultra-Low Qg and Qgd Low Thermal ...
2024-12-09 22:37:47
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...Mosfet Power Transistor MOSFET 40V N-Channel NexFET Power MOSFET 1 Features Ultra low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level ...
2024-12-09 22:37:47
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... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ...
2024-12-09 22:41:27
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