CSD17313Q2 Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET

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City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo View Contact Details

CSD17313Q2 Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET

Brand Name	Ti
Model Number	CSD17313Q2
Minimum Order Quantity	Contact us
Price	Contact us
Payment Terms	Paypal, Western Union, TT
Supply Ability	50000 Pieces per Day
Delivery Time	The goods will be shipped within 3 days once received fund
Packaging Details	SON6
Description	MOSFET N-CH 30V 5A 6WSON
Id - Continuous Drain Current	5 A
Rds On - Drain-Source Resistance	30 mOhms
Vgs - Gate-Source Voltage	8 V
Qg - Gate Charge	2.1 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C

Detailed Product Description

CSD17313Q2 Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET

1 Features

Optimized for 5-V Gate Drive
Ultra-Low Qg and Qgd
Low Thermal Resistance
Pb-Free
RoHS Compliant
Halogen-Free
SON 2-mm × 2-mm Plastic Package

2 Applications

DC-DC Converters
Battery and Load Management Applications

3 Description

This 30-V, 24-mΩ, 2-mm x 2-mm SON NexFETTM power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.

Product Summary

(1) For all available packages, see the orderable addendum at the end of the data sheet.

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain-to-Source Voltage	30		V
Qg	Gate Charge Total (4.5 V)	2.1		nC
Qgd	Gate Charge Gate-to-Drain	0.4		nC
RDS(on)	Drain-to-Source On Resistance	VGS = 3 V	31	mΩ
		VGS = 4.5 V	26	mΩ
		VGS = 8 V	24	mΩ
VGS(th)	Threshold Voltage	1.3		V

Ordering Information

PART NUMBER	QTY	MEDIA	PACKAGE	SHIP
CSD17313Q2	3000	13-Inch Reel	SON 2-mm × 2-mm Plastic Package	Tape and Reel
CSD17313Q2T	250	7-Inch Reel	SON 2-mm × 2-mm Plastic Package	Tape and Reel

Absolute Maximum Ratings

TA = 25°C		VALUE	UNIT
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	+10 / –8	V
ID	Continuous Drain Current (package limited)	5	A
	Continuous Drain Current (silicon limited), TC = 25°C	19
	Continuous Drain Current(1)	7.3
IDM	Pulsed Drain Current, TA = 25°C(2)	57	A
PD	Power Dissipation(1)	2.4	W
PD	Power Dissipation, TC = 25°C	17	W
TJ, TSTG	Operating Junction and Storage Temperature Range	–55 to 150	°C
EAS	Avalanche Energy, Single Pulse, ID =19A,L=0.1mH,RG =25Ω	18	mJ

Product Tags: mosfet motor control circuit n channel mos field effect transistor

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