HEXFET Power Mosfet Transistor , power mosfet module IRF7329TRPBF

HEXFET Power Mosfet Transistor , power mosfet module IRF7329

Trench Technology

Ultra Low On-Resistance

Dual P-Channel MOSFET

Low Profile (<1.8mm)

Available in Tape & Reel

Lead-Free

Description

New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique