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CSD18501Q5A Mosfet Power Transistor MOSFET 40V N-Channel NexFET Power MOSFET

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CSD18501Q5A Mosfet Power Transistor MOSFET 40V N-Channel NexFET Power MOSFET

Brand Name Ti
Model Number CSD18501Q5A
Minimum Order Quantity Contact us
Price Contact us
Payment Terms Paypal, Western Union, TT
Supply Ability 50000 Pieces per Day
Delivery Time The goods will be shipped within 3 days once received fund
Packaging Details DFN56
Description N-Channel 40 V 22A (Ta), 100A (Tc) 3.1W (Ta), 150W (Tc) Surface Mount 8-VSONP (5x6)
Packaging Cut Tape
Height 1 mm
Transistor Type 1 N-Channel
Width 4.9 mm
Brand Texas Instruments
Forward Transconductance - Min 118 S
Detailed Product Description

CSD18501Q5A Mosfet Power Transistor MOSFET 40V N-Channel NexFET Power MOSFET

 

1 Features

  • Ultra low Qg and Qgd
  • Low Thermal Resistance

  • Avalanche Rated

  • Logic Level

  • Pb Free Terminal Plating

  • RoHS Compliant

  • Halogen Free

  • SON 5-mm × 6-mm Plastic Package

     

2 Applications

  • DC-DC Conversion

  • Secondary Side Synchronous Rectifier

  • Battery Motor Control

     

3 Description

This 40 V, 2.5 mΩ, SON 5 × 6 mm NexFETTM power MOSFET has been designed to minimize losses in power conversion applications.

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

40

V

Qg

Gate Charge Total (4.5 V)

20

nC

Qgd

Gate Charge Gate-to-Drain

5.9

nC

RDS(on)

Drain-to-Source On-Resistance

VGS = 4.5 V

3.3

VGS =10V

2.5

VGS(th)

Threshold Voltage

1.8

V

 

Ordering Information(1)

Device

Qty

Media

Package

Ship

CSD18501Q5A

2500

13-Inch Reel

SON 5 mm × 6 mm Plastic Package

Tape and Reel

CSD18501Q5AT

250

7-Inch Reel

 

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

40

V

VGS

Gate-to-Source Voltage

±20

V

ID

Continuous Drain Current (Package limited)

100

A

Continuous Drain Current (Silicon limited), TC = 25°C

161

Continuous Drain Current (1)

22

A

IDM

Pulsed Drain Current (2)

400

A

PD

Power Dissipation(1)

3.1

W

Power Dissipation, TC = 25°C

150

TJ, Tstg

Operating Junction and Storage Temperature Range

–55 to 150

°C

EAS

Avalanche Energy, Single Pulse ID =68A,L=0.1mH,RG =25Ω

231

mJ

 
Product Tags: mosfet motor control circuit   n channel mos field effect transistor  
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