CSD18501Q5A Mosfet Power Transistor MOSFET 40V N-Channel NexFET Power MOSFET

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

40

V

Qg

Gate Charge Total (4.5 V)

20

nC

Qgd

Gate Charge Gate-to-Drain

5.9

nC

RDS(on)

Drain-to-Source On-Resistance

VGS = 4.5 V

3.3

mΩ

VGS =10V

2.5

mΩ

VGS(th)

Threshold Voltage

1.8

V

Device

Qty

Media

Package

Ship

CSD18501Q5A

2500

13-Inch Reel

SON 5 mm × 6 mm Plastic Package

Tape and Reel

CSD18501Q5AT

250

7-Inch Reel

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

40

V

VGS

Gate-to-Source Voltage

±20

V

ID

Continuous Drain Current (Package limited)

100

A

Continuous Drain Current (Silicon limited), TC = 25°C

161

Continuous Drain Current (1)

22

A

IDM

Pulsed Drain Current (2)

400

A

PD

Power Dissipation(1)

3.1

W

Power Dissipation, TC = 25°C

150

TJ, Tstg

Operating Junction and Storage Temperature Range

–55 to 150

°C

EAS

Avalanche Energy, Single Pulse ID =68A,L=0.1mH,RG =25Ω

231

mJ