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FDMS3662 Mosfet Driver Circuit Using Transistor 100V N-Channel PowerTrench

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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FDMS3662 Mosfet Driver Circuit Using Transistor 100V N-Channel PowerTrench

Brand Name Ti
Model Number FDMS3662
Minimum Order Quantity Contact us
Price Contact us
Payment Terms Paypal, Western Union, TT
Supply Ability 50000 Pieces per Day
Delivery Time The goods will be shipped within 3 days once received fund
Packaging Details QFN
Description N-Channel 100 V 8.9A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
Unit Weight 0.002402 oz
Product Type MOSFET
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 155 C
Rds On - Drain-Source Resistance 14.8 mOhms
Vgs - Gate-Source Voltage 20 V
Detailed Product Description

FDMS3662 Mosfet Power Transistor MOSFET 100V N-Channel PowerTrench

 

Features

  • Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A
  • Advanced Package and Silicon combination for low rDS(on)
  • MSL1 robust package design
  • 100% UIL Tested
  • RoHS Compliant

 

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

 

Application

  • DC - DC Conversion

Product Tags: p channel mosfet driver circuit   n channel mos field effect transistor  
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