FDMS3662 Mosfet Driver Circuit Using Transistor 100V N-Channel PowerTrench

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

FDMS3662 Mosfet Driver Circuit Using Transistor 100V N-Channel PowerTrench

Brand Name	Ti
Model Number	FDMS3662
Minimum Order Quantity	Contact us
Price	Contact us
Payment Terms	Paypal, Western Union, TT
Supply Ability	50000 Pieces per Day
Delivery Time	The goods will be shipped within 3 days once received fund
Packaging Details	QFN
Description	N-Channel 100 V 8.9A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
Unit Weight	0.002402 oz
Product Type	MOSFET
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 155 C
Rds On - Drain-Source Resistance	14.8 mOhms
Vgs - Gate-Source Voltage	20 V

Detailed Product Description

FDMS3662 Mosfet Power Transistor MOSFET 100V N-Channel PowerTrench

Features

Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A
Advanced Package and Silicon combination for low rDS(on)
MSL1 robust package design
100% UIL Tested
RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Application

DC - DC Conversion

Product Tags: p channel mosfet driver circuit n channel mos field effect transistor

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