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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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low voltage power mosfet

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...power mosfet 2SB1560 , DarliCM GROUPon 2SB1560 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) PINNING PIN DESCRIPTION 1 Base ... 2024-12-09 22:38:38
HUF75645P3, HUF75645S3S 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Features • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V • ... 2024-12-09 22:38:51
IRFZ34NPbF HEXFET® Power MOSFET • Advanced Process • Technology Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast ... 2024-12-09 22:38:51
...Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Ease of ... 2024-12-09 22:41:27
... Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost... 2024-12-09 22:41:27
...POWER MOSFET TYPE VDSS RDS(on) ID STN3NF06 60 V < 0.1 Ω 4 A ■ TYPICAL RDS(on) = 0.07 Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ ... 2024-12-09 22:42:04
...Power Mosfet 12A / 200V P-Channel Original FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Isolated Central Mounting ... 2024-12-09 22:48:58
...Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. ... 2024-12-09 22:38:51
...Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. ... 2024-12-09 22:41:27
...MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • Pb−Free Packages are Available V(BR)DSS RDS(on) MAX ID MAX 60 V 7.5 @ 10 V, 500 mA 115 mA MAXIMUM ... 2024-12-09 22:41:27
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