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200A Power Mosfet Transistor Fast Switching Power MOSFET IRFP260NPBF

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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200A Power Mosfet Transistor Fast Switching Power MOSFET IRFP260NPBF

Model Number IRFP260NPBF
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 9200pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description N-Channel 200 V 50A (Tc) 300W (Tc) Through Hole TO-247AC
Pulsed Drain Current 200 A
Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 560 mJ
Avalanche Current 50 A
Detailed Product Description

 

IRFP260NPbF HEXFET® Power MOSFET

 

• Advanced Process Technology

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Ease of Paralleling

• Simple Drive Requirements

• Lead-Free

 

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

 

 

 

Absolute Maximum Ratings

 ParameterMax.Units
ID @ TC = 25°CContinuous Drain Current, VGS @ 10V50A
ID @ TC = 100°CContinuous Drain Current, VGS @ 10V35A
IDMPulsed Drain Current200A
PD @TC = 25°CPower Dissipation300A
 Linear Derating Factor2.0W/°C
VGSGate-to-Source Voltage±20V
EASSingle Pulse Avalanche Energy560mJ
IARAvalanche Current50A
EARRepetitive Avalanche Energy30mJ
dv/dtPeak Diode Recovery dv/dt10V/ns
TJ, TSTGOperating Junction and Storage Temperature Range-55 to +175°C
 Soldering Temperature, for 10 seconds300 (1.6mm from case )°C
 Mounting torque, 6-32 or M3 srew10 lbfïin (1.1Nïm) 

 

 

 

 

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Product Tags: power mosfet ic   silicon power transistors  
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