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Third generation HEXFET IRFBC40PBF Power Mosfet Transistor Fast Switching

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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Third generation HEXFET IRFBC40PBF Power Mosfet Transistor Fast Switching

Brand Name VISHAY
Model Number IRFBC40PBF
Certification Original Factory Pack
Place of Origin Japan
Minimum Order Quantity 20pcs
Price Negotiation
Payment Terms T/T, Western Union,PayPal
Supply Ability 5200PCS
Delivery Time 1 Day
Packaging Details please contact me for details
Description N-Channel 600 V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB
VDS (V) 600
RDS(on) (Ω) VGS = 10 V
Qg (Max.) (nC) 60
Qgs (nC) 8.3
Qgd (nC) 30
Configuration Single
Detailed Product Description

Power MOSFET

 

FEATURES

 

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

 

 

 

DESCRIPTION

 

  Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

 

  The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry

 

 

 

 

 

ORDERING INFORMATION
PackageTO-220
Lead (Pb)-free

IRFBC40PbF

SiHFBC40-E3

SnPb

IRFBC40

SiHFBC40

 

 

 

 

 

 

 

 

 

Product Tags: multi emitter transistor   silicon power transistors  
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