NDT456P Power Mosfet Transistor P-Channel Field Effect Transistor

NDT456P P-Channel Enhancement Mode Field Effect Transistor

General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.

Features 

• -7.5 A, -30 V. R_DS(ON) = 0.030 W @ V_GS = -10 V
•                       R_DS(ON) = 0.045 W @ VGS = -4.5 V.
• High density cell design for extremely low R_DS(ON).
• High power and current handling capability in a widely used surface mount package.

Absolute Maximum Ratings T_A = 25°C unless otherwise noted

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