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NDT456P Power Mosfet Transistor P-Channel Field Effect Transistor

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City: shenzhen

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NDT456P Power Mosfet Transistor P-Channel Field Effect Transistor

Model Number NDT456P
Certification new & original
Place of Origin original factory
Minimum Order Quantity 20pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 6900pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description P-Channel 30 V 7.5A (Ta) 3W (Ta) Surface Mount SOT-223-4
Drain-Source Voltage -30 V
Gate-Source Voltage ±20 V
Operating and Storage Temperature -65 to 150 °C
Package SOT-223
Detailed Product Description

 

NDT456P P-Channel Enhancement Mode Field Effect Transistor

 

General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.

 

Features 

  • -7.5 A, -30 V. RDS(ON) = 0.030 W @ VGS = -10 V
  •                       RDS(ON) = 0.045 W @ VGS = -4.5 V.
  • High density cell design for extremely low RDS(ON).
  • High power and current handling capability in a widely used surface mount package.

 

Absolute Maximum Ratings TA = 25°C unless otherwise noted

 

SymbolParameterNDT456PUnits
VDSSDrain-Source Voltage-30V
VGSSGate-Source Voltage±20V
ID

Drain Current - Continuous (Note 1a)

                       - Pulsed

±7.5A
±20A
PD

Maximum Power Dissipation (Note 1a)

                                             (Note 1b)  

                                             (Note 1c)

3W
1.3W
1.1W
TJ ,TSTGOperating and Storage Temperature Range-65 to 150°C

 

 

 

 

 

 

 

 

 

 

 

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Product Tags: power mosfet ic   multi emitter transistor  
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