NDT452AP Power Mosfet Transistor P Channel Enhancement Mode Field Effect Transistor
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NDT452AP P-Channel Enhancement Mode Field Effect Transistor
General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.
Features • -5A, -30V. RDS(ON) = 0.065W @ VGS = -10V RDS(ON) = 0.1W @ VGS = -4.5V. • High density cell design for extremely low RDS(ON). • High power and current handling capability in a widely used surface mount package.
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RqCA is determined by the user's board design.
Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 42℃/W when mounted on a 1 in2 pad of 2oz copper. b. 95℃/W when mounted on a 0.066 in2 pad of 2oz copper. c. 110℃/W when mounted on a 0.0123 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper
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Product Tags: power mosfet ic silicon power transistors |