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low voltage power mosfet
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2SA1761 Power Mosfet Transistor Electronics Components Chip IC Electronics • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = ...
2024-12-09 22:41:27
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...Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This ...
2024-12-09 22:38:38
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... l Fast Switching l Fully Avalanche Rated Key Specifications: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced ...
2024-12-09 22:38:38
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... • Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 23 S (typ.) • Low leakage current: IDSS = ...
2024-12-09 22:38:51
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... Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on...
2024-12-09 22:41:27
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...power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio ...
2024-12-09 22:38:38
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... • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching...
2024-12-09 22:38:51
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...Power MOSFET General features Type VDSS RDS(on) ID STD65NF06 60V
2024-12-09 22:38:51
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... Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to ...
2024-12-09 22:41:27
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...Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche ...
2024-12-09 22:38:51
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