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Dynamic dV/dt Rating IRFP240PBF Power Mosfet Transistor Fast switching power mosfet

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Dynamic dV/dt Rating IRFP240PBF Power Mosfet Transistor Fast switching power mosfet

Model Number IRFP240PBF
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 9500pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description N-Channel 200 V 20A (Tc) 150W (Tc) Through Hole TO-247AC
Drain-Source Voltage 200 V
Gate-Source Voltage ± 20 V
Pulsed Drain Current 80 A
Linear Derating Factor 1.2 W/°C
Single Pulse Avalanche Energy 510 mJ
Maximum Power Dissipation 150 W
Detailed Product Description

 

IRFP240, SiHFP240

Power MOSFET

 

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

 

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

 

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

 

 

 

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETERSYMBOLLIMITUNIT
Drain-Source VoltageVDS200V
Gate-Source VoltageVGS± 20V
Continuous Drain CurrentVGS at 10 VTC = 25 °CID20A
TC = 100 °C12
Pulsed Drain CurrentaIDM80A
Linear Derating Factor 1.2W/°C
Single Pulse Avalanche EnergybEAS510mJ
Repetitive Avalanche CurrentaIAR20A
Repetitive Avalanche EnergyaEAR15mJ
Maximum Power DissipationTC = 25 °CPD150W
Peak Diode Recovery dV/dtcdV/dt5.0V/ns
Operating Junction and Storage Temperature RangeTJ, Tstg- 55 to + 150°C
Soldering Recommendations (Peak Temperature)for 10 s 300d°C
Mounting Torque6-32 or M3 screw 10lbf · in
1.1N · m

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 50 V, starting TJ = 25 °C, L = 1.9 mH, RG = 25 Ω, IAS = 20 A (see fig. 12).

c. ISD ≤ 18 A, dI/dt ≤ 150 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

 

 

 

 

Stock Offer (Hot Sell)

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LM2651MTCX-ADJ8710NS04+TSSOP

 

 

 

Product Tags: multi emitter transistor   silicon power transistors  
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