STP65NF06 Power Mosfet Transistor N-channel DPAK/TO-220 Power MOSFET

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STP65NF06 Power Mosfet Transistor N-channel DPAK/TO-220 Power MOSFET

Model Number	STP65NF06
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	20pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	8000pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	N-Channel 60 V 60A (Tc) 110W (Tc) Through Hole TO-220
Drain-source voltage (VGS = 0)	60 V
Gate- source voltage	± 20 V
Drain current (pulsed)	240 A
Total dissipation at TC = 25°C	110 W
Derating Factor	0.73 W/°C
Peak diode recovery voltage slope	10 V/ns

Detailed Product Description

STD65NF06

STP65NF06

N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET

General features

Type	V_DSS	R_DS(on)	I_D
STD65NF06	60V	<14mΩ	60A
STP65NF06	60V	<14mΩ	60A

■ Standard level gate drive

■ 100% avalanche tested

Description

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Applications

■ Switching application

Absolute maximum ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source voltage (V_GS = 0)	60	V
V_GS	Gate- source voltage	± 20	V
I_D	Drain current (continuous) at T_C = 25°C	60	A
I_D	Drain current (continuous) at T_C = 100°C	42	A
I_DM⁽¹⁾	Drain current (pulsed)	240	A
P_tot	Total dissipation at T_C = 25°C	110	W
	Derating Factor	0.73	W/°C
dv/dt ⁽²⁾	Peak diode recovery voltage slope	10	V/ns
E_AS (3)	Single pulse avalanche energy	390	mJ
T_stg	Storage temperature	-55 to 175	°C
Tj	Max. operating junction temperature	-55 to 175	°C

1. Pulse width limited by safe operating area.

2. I_SD ≤60A, di/dt ≤300A/µs, V_DD ≤ V_(BR)DSS, Tj ≤ T_JMAX.

3. Starting Tj = 25 °C, I_D = 30A, V_DD = 40V

Stock Offer (Hot Sell)

Part no.

Quantity

Brand

D/C

Package

LM3916N	1100	NSC	14+	DIP-18
MSP430F1491IPMR	1100	TI	14+	QFP
XC4VSX35-10FFG668I	1100	XILINX	14+	BGA
SEM3040	1102	SEM	16+	SOP-8
DL4744A	1110	PANJIT	16+	SMD
ADS5400IPZP	1117	TI	13+	QFP
HC4094	1125		15+	SSOP16
BTA26-600B	1130	ST	16+	TO3P
SN74LS574N	1132	TI	16+	DIP
AM27C256-150DC	1150	AMD	14+	CDIP-28
BDW42	1158	ON	14+	TO-220
74F138DR	1184	TI	14+	SOP
TL2844BDR-8	1199	TI	16+	SOP-8
2SK1544	1200	TOSHIBA	16+	TO3PL
30EPH06PBF	1200	VISHAY	13+	TO-247
74HCT367D	1200	PHI	15+	SOP
ADUM5402ARWZ	1200	AD	16+	SOP
ADV7180BSTZ	1200	AD	16+	QFP
AF4825PS	1200	ANACHIP	14+	SOP-8
AS15-F	1200	E-CMOS	14+	QFP
B58290	1200		14+	SOP-24
CAT28F010G-12	1200	CSI	16+	PLCC32
CLC007BMA	1200	NS	16+	SOP8
D8020L	1200	TECCOR	13+	TO-220
DS1643-120	1200	DALLAS	15+	DIP
DS1820	1200	DALLAS	16+	TO92
ICL7665SCPA	1200	INTERSIL	16+	DIP-8
IRFB20N50KPBF	1200	VISHAY	14+	TO-220AB
ISQ201	1200	ISOCOM	14+	DIP-16
L4947PD	1200	ST	14+	SOP20

Product Tags: multi emitter transistor silicon power transistors

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