IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet

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IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet

Model Number	IRFR9120N
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	10pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	9500pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	P-Channel 100 V 6.6A (Tc) 40W (Tc) Surface Mount D-Pak
Pulsed Drain Current	-26 A
Power Dissipation	40 W
Linear Derating Factor	0.32 W/°C
Gate-to-Source Voltage	± 20 V
Single Pulse Avalanche Energy	100 mJ
Avalanche Current	-6.6 A

Detailed Product Description

IRFR/U9120N

HEXFET® Power MOSFET

• Ultra Low On-Resistance

• P-Channel

• Surface Mount (IRFR9120N)

• Straight Lead (IRFU9120N)

• Advanced Process Technology

• Fast Switching

• Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Absolute Maximum Ratings

	Parameter	Max.	Units
I_D @ T_C = 25°C	Continuous Drain Current, V_GS @ -10V	-6.6	A
I_D @ T_C = 100°C	Continuous Drain Current, V_GS @ -10V	-4.2	A
I_DM	Pulsed Drain Current	-26	A
P_D @T_C = 25°C	Power Dissipation	40	W
	Linear Derating Factor	0.32	W/°C
V_GS	Gate-to-Source Voltage	± 20	V
E_AS	Single Pulse Avalanche Energy	100	mJ
I_AR	Avalanche Current	-6.6	A
E_AR	Repetitive Avalanche Energy	4.0	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
T_{J ,}T_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )	°C

Stock Offer (Hot Sell)

Part No.

Quantity

Brand

D/C

Package

LM3102MHX	4578	NS	1540+	TSSOP-20
LM311DR	58000	TI	13+	SOP-8
LM311DT	60000	ST	16+	SOP-8
LM317AMDT	52000	NS	13+	TO-252
LM317BTG	13900	ON	11+	TO-220
LM317DCYR	20007	TI	16+	SOT-223
LM317LD13TR	17000	ST	16+	SOP-8
LM317LZ	21782	TI	15+	TO-92
LM317MBSTT3G	4644	ON	15+	SOT-223
LM317MDTRKG	5965	ON	14+	TO-252
LM317MDT-TR	59000	ST	15+	TO-252
LM317MDTX	93000	NS	14+	TO-252
LM318P	3377	TI	03+	DIP-8
LM321MFX	6036	TI	10+	SOT-23
LM324ADR	66000	TI	16+	SOP-14
LM324ADR2G	11000	ON	14+	SOP-14
LM324DR	55000	TI	16+	SOP-14
LM324MX	6674	NS	16+	SOP-14
LM324N	28000	TI	13+	DIP-14
LM336DR-2-5	6529	TI	16+	SOP-8
LM339APWR	58000	TI	14+	TSSOP-14
LM339DT	110000	ST	12+	SOP-14
LM339MX	15905	NSC	03+	SOP-14
LM3404HVMRX	14402	TI	16+	SOP-8
LM3404MAX	14745	NS	15+	SOP-8
LM340T-15	4529	NS	13+	TO-220
LM3411M5-5.0	6998	TI	00+	SOT23-5
LM3414HVMR	8906	TI	10+	SOP-8
LM347MX	5871	NSC	11+	SOP
LM3480IM3X-3.3	15676	TI	05+	SOT23-3

Product Tags: multi emitter transistor silicon power transistors

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IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet

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