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HEXFET Power MOSFET silicon power transistors IRF3205PBF

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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HEXFET Power MOSFET silicon power transistors IRF3205PBF

Model Number IRF3205PBF
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price negotiation
Payment Terms T/T, Western Union, PayPal
Supply Ability 300pcs
Delivery Time 1 day
Packaging Details please contact me for details
Description N-Channel 55 V 110A (Tc) 200W (Tc) Through Hole TO-220AB
Continuous Drain Current, VGS @ 10V 110 A;80 A
Pulsed Drain Current 390 A
Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 62 A
Detailed Product Description

                                                                                  

• Advanced Process

• Technology Ultra Low On-Resistance

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Lead-Free

 

 

Description

 

Advanced HEXFET® Power MOSFETs from International                          

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

 

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation levels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Product Tags: npn smd transistor   silicon power transistors  
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