HUF75645P3 power mosfet module N-Channel , UltraFET Power MOSFETs

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Model Number	HUF75645P3
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	20pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	9000pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	N-Channel 100 V 75A (Tc) 310W (Tc) Through Hole TO-220-3
Drain to Source Voltage	100 V
Drain to Gate Voltage	100 V
Gate to Source Voltage	±20 V
Power Dissipation	310 W
Operating and Storage Temperature	-55 to 175 ℃
Package	TO-220AB

Detailed Product Description

HUF75645P3, HUF75645S3S

75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs

Features

• Ultra Low On-Resistance

- rDS(ON) = 0.014Ω, VGS = 10V

• Simulation Models

- Temperature Compensated PSPICE® and SABER© Electrical Models

- Spice and Saber Thermal Impedance Models

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Absolute Maximum Ratings T_C = 25℃, Unless Otherwise Specified

PARAMETER	SYMBOL	HUF75645P3, HUF75645S3S	UNITS
Drain to Source Voltage (Note 1)	V_DSS	100	V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1)	V_DGR	100	V
Gate to Source Voltage	V_GS	±20	V
Drain Current Continuous (T_C= 25℃, V_GS = 10V) (Figure 2) Continuous (T_C= 100℃, V_GS = 10V) (Figure 2)	I_D I_D	75 65	A A
Power Dissipation Derate Above 25℃	P_D	310 2.07	W W/℃
Operating and Storage Temperature	T_J, T_STG	-55 to 175	℃
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334	T_L T_pkg	300 260	℃ ℃

NOTES: 1. TJ = 25℃ to 150℃.

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Product Tags: power mosfet ic silicon power transistors

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