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Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 ,

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City: shenzhen

Country/Region:china

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Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 ,

Model Number 2SB1560
Certification new & original
Place of Origin original factory
Minimum Order Quantity 20
Price Negotiation
Payment Terms T/T, Western Union, Paypal
Supply Ability 8000
Delivery Time 1 day
Packaging Details Please contact me for details
Description Bipolar (BJT) Transistor PNP - DarliCM GROUPon 150 V 10 A 50MHz 100 W Through Hole TO-3P
Package TO-3PN
Applications Audio ,regulator and general purpose
Detailed Product Description

Silicon PNP Epitaxial Planar audio power mosfet 2SB1560 ,
 
DarliCM GROUPon 2SB1560

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)

 

 
 

PINNING

    PIN      DESCRIPTION
      1     Base
      2  Collector;connected to          mounting base
      3     Emitter

 
 
 
 
 
 
 
 
 

Absolute maximum ratings(Ta=℃)

 SYMBOL         PARAMETERCONDITIONS  VALUE  UNIT
  VCBO    Collector-base voltageOpen emitter  -160   V
  VCEO    Collector-emitter voltageOpen base  -150   V
  VEBO    Emitter-base voltageOpen collector  -5   V
  IC    Collector current   -10   A
  IB    Base current   1   A
  PC    Collector power dissipationTC=25℃  100   W
  Tj    Junction temperature   150   ℃
  Tstg    Storage temperature   -55~150   ℃

 
 

CHARACTERISTICS Tj=25℃ (unless otherwise specified)

SYMBOL           PARAMETER      CONDITIONS  MIN TYP.  MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0  -150    V
  VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA    -2.5  V
  VBEsat Base-emitter saturation voltage IC=-7A ;IB=-7mA    -3.0  V
  ICBO Collector cut-off current VCB=-160V; IE=0    -100  μA
  IEBO Emitter cut-off current VEB=-5V; IC=0    -100  μA
  hFE DC current gain IC=-7A ; VCE=-4V  5000   
  Cob Output capacitance IE=0 ; VCB=10V;f=1MHz   230   pF
   fT Transition frequency IC=-2A ; VCE=-12V   50   MHz
Switching times
   ton   Turn-on time

 IC=-7A;RL=10Ω
 IB1=- IB2=-7mA
 VCC=-70V

   0.8   μs
   ts   Storage time   3.0   μs
   tf    Fall time   1.2   μs

 

‹ hFE Classifications

                          O                     P                     Y
                  5000-12000              6500-20000            15000-30000

 
 
PACKAGE OUTLINE

 

 
 
 
 
 

Product Tags: npn smd transistor   multi emitter transistor  
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