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fast ethernet switch chip
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FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors Features • RDS(on) = 7.35mΩ ( Typ.)@ VGS = 10V, ID = 96A • Fast Switching Speed ...
2024-12-09 22:37:59
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... flat over the specified analog signal range (10Ω max). They also offer low leakage over temperature (NO-off leakage current less than 2nA at +85°C...
2024-12-09 22:38:38
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IRFPE50 Transistor Electronics Components electronic Power MOSFET Features • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central ...
2024-12-09 22:38:38
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FGH60N60SFD 600V, 60A Field Stop IGBT Features • High current capability • Low saturation voltage: VCE(sat) =2.3V @ IC = 60A • High input impedance • ...
2024-12-09 22:38:38
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... extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power ...
2024-12-09 22:38:38
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IRFP9240, SiHFP9240 Power MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Isolated Central Mounting Hole • Fast ...
2024-12-09 22:38:51
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IRF2907ZS-7PPbF HEXFET® Power MOSFET Features • Advanced Process Technology • Ultra Low On-Resistance • 175°C Operating Temperature • Fast Switching • ...
2024-12-09 22:38:51
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2N7002DW-7-F DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage ...
2024-12-09 22:38:51
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... Fast switching speed. • High performance trench technology for extremely low RDS(ON). • High power and current handling capability General ...
2024-12-09 22:41:27
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... Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to ...
2024-12-09 22:41:27
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