FGH60N60SFDTU Power Mosfet Module 600V , 60A Field Stop IGBT

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Country/Region:china

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FGH60N60SFDTU Power Mosfet Module 600V , 60A Field Stop IGBT

Model Number	FGH60N60SFD
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	20pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	Negotiate
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	IGBT Field Stop 600 V 120 A 378 W Through Hole TO-247-3
Collector to Emitter Voltage	600 V
Gate to Emitter Voltage	± 20 V
Collector Current @ TC = 25℃	120 A
Pulsed Collector Current @ TC = 25℃	180 A
Operating Junction Temperature	-55 to +150 ℃
Storage Temperature Range	-55 to +150 ℃

Detailed Product Description

FGH60N60SFD

600V, 60A Field Stop IGBT

Features

• High current capability

• Low saturation voltage: VCE(sat) =2.3V @ IC = 60A

• High input impedance

• Fast switching

• RoHS compliant

Applications

• Induction Heating, UPS, SMPS, PFC

General Description

Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.

Absolute Maximum Ratings

Symbol	Description	Ratings	Units
V_CES	Collector to Emitter Voltage	600	V
V_GES	Gate to Emitter Voltage	± 20	V
I_C	Collector Current @ TC = 25℃	120	A
I_C	Collector Current @ TC = 100℃	60	A
I_{CM (1)}	Pulsed Collector Current @ TC = 25℃	180	A
P_D	Maximum Power Dissipation @ TC = 25℃	378	W
P_D	Maximum Power Dissipation @ TC = 100℃	151	W
T_J	Operating Junction Temperature	-55 to +150	℃
T_stg	Storage Temperature Range	-55 to +150	℃
T_L	Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds	300	℃

Notes: 1: Repetitive test, Pulse width limited by max. juntion temperature

Mechanical Dimensions

TO-247AB (FKS PKG CODE 001)

Product Tags: npn smd transistor silicon power transistors

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