FDS5690 60V Trench Power Mosfet Transistor , smd linear power mosfet

FDS5690 60V N-Channel PowerTrench MOSFET smd power mosfet linear power mosfet

Features

• 7 A, 60 V.

RDS(on) = 0.028 Ω @ VGS = 10 V

RDS(on) = 0.033 Ω @ VGS = 6 V.

• Low gate charge (23nC typical).

• Fast switching speed.

• High performance trench technology for extremely low RDS(ON).

• High power and current handling capability

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Applications

• DC/DC converter

• Motor drives

Typical Characteristics

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