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FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors

Brand Name FAIRCHILD
Model Number FDP085N10A
Certification Original Factory Pack
Place of Origin America
Minimum Order Quantity 5pcs
Price Negotiation
Payment Terms T/T, Western Union,PayPal
Supply Ability 5600PCS
Delivery Time 1 Day
Packaging Details please contact me for details
Description N-Channel 100 V 96A (Tc) 188W (Tc) Through Hole TO-220-3
Drain to Source Voltage 100V
Single Pulsed Avalanche Energy 269mJ
Peak Diode Recovery dv/dt 6.0V/ns
Operating and Storage Temperature Range -55 to +175°C
Detailed Product Description

 FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors

  Features

• RDS(on) = 7.35mΩ ( Typ.)@ VGS = 10V, ID = 96A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low RDS(on)

• High Power and Current Handling Capability

• RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
• DC to DC Converters

• Synchronous Rectification for Telecommunication PSU

• Battery Charger

• AC motor drives and Uninterruptible Power Supplies

• Off-line UPS

Thermal Characteristics​

SymbolParameterRatingsUnits
RθJCThermal Resistance, Junction to Case0.8°C/W
RθJAThermal Resistance, Junction to Ambient62.5°C/W


Typical Performance Characteristics 


 

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Product Tags: electronic integrated circuit   linear integrated circuits  
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