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IRFPE50 Transistor Electronics Components electronic Power MOSFET

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IRFPE50 Transistor Electronics Components electronic Power MOSFET

Brand Name IR/VISHAY
Model Number IRFPE50
Certification Original Factory Pack
Place of Origin Malaysia
Minimum Order Quantity 10pcs
Price Negotiation
Payment Terms T/T, Western Union,PayPal
Supply Ability 6800PCS
Delivery Time 1 Day
Packaging Details TUBE
Description N-Channel 800 V 7.8A (Tc) 190W (Tc) Through Hole TO-247AC
Temperature Range –55 to +150°C
Payment Term T/T, Paypal, Western Union
Voltage ±20V
Current 4.9A
Package TO-247
Factory Package TUBE
Detailed Product Description

IRFPE50 Transistor Electronics Components electronic Power MOSFET

 

Features

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

 

C.I MM74HC164MXFSCP0552AD/P9FADSOP-14
DIODO BYG23M-E3/TRVISHAY1632SMA
DIODO SML4742A-E3/61VISHAY1632/12SMA
DIODO BYG23M-E3/TRVISHAY1632SMA
DIODO SML4742A-E3/61VISHAY1632/12SMA
RES 2010 330R 5% CRCW2010330RJNEFVISHAY1612SMD2010
RES 2010 68K 5% CRCW201068K0JNEFVISHAY1612SMD2010
C.I MCP6S26-I/SLMICROCHIP16255C4SOP-14
ACOPLADOR. PC817ASHARP2016.08.10/H33DIP-4
TRANS 2SS52MHoneywell2SSM/523-LFTO-92
C.I SCC2691AC1D241149+SOP-24
C.I TP3057WMTIXM33AFSOP-16
C.I CD14538BETI33ADS8KDIP-16
C.I CL2N8-GMICROCHIPCL2CSOT-89
C.I SN75179BPTI57C50DMDIP-8
C.I L6219DSST135SOP-24
CAP 1210 470PF 1KV NP0 CL32C471JIINNNESAMSUNGAC7JO2HSMD1210
INDUTOR 3.3UH SLF6045T-3R3N2R8-3PFTDKYA16H0945122/3R3SMD6045
CAP ELCO SMD 2.2UF 50V EEE-1HA2R2SRPANY1628F843536/2.2/50V/SYKSMD4*5.4
C.I 24LC256-I/SNMICROCHIP1636M6GSOP-8
CAP ELCO SMD 150UF 25V UCD1E151MNL1GSNICHICON160602/150/25V/H72SMD8*10.5
RES RC0805JR-0727RLYAGEO1538SMD0805
C.I SN75240PWTI11/A75240MSOP-8
RES RC0805JR-0715KLYAGEO1637SMD0805
CAP CER 0805 1UF 10V X7R LMK212BJ105MG-TTAIYOYUDEN1608SMD0805
CAP CER 0805 4.7UF 50V X5R CL21A475KBQNNNESAMSUNGAC7JO2HSMD0805
RES 0805 28K7 RC0805FR-0728K7L 1%YAGEO1638SMD0805
RES 3K3 5% CASE 0805RC0805JR-073K3LYAGEO1623SMD0805
TRIAC BTA26-600BRGST628TO-3P
CAP 0805 330NF 100V C2012X7S2A334K125ABTDKIB16F15763SDSMD0805

 

Descriptions

 

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

 

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.

 

The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

 

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain-Source Voltage VDS 800 V

Gate-Source Voltage VGS ± 20

Continuous Drain Current VGS at 10 V

TC = 25 °C ID 7.8 TC = 100 °C 4.9 A

Pulsed Drain Currenta IDM 31

Linear Derating Factor 1.5 W/°C

Single Pulse Avalanche Energyb EAS 770 mJ

Repetitive Avalanche Currenta IAR 7.8 A

Repetitive Avalanche Energya EAR 19 mJ

Maximum Power Dissipation TC = 25 °C PD 190 W

Peak Diode Recovery dV/dtc dV/dt 2.0 V/ns

Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C

Soldering Recommendations (Peak Temperature) for 10 s 300d

Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m

Product Tags: npn smd transistor   silicon power transistors  
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