IRFPE50 Transistor Electronics Components electronic Power MOSFET
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IRFPE50 Transistor Electronics Components electronic Power MOSFET
Features • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available
Descriptions
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain-Source Voltage VDS 800 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 7.8 TC = 100 °C 4.9 A Pulsed Drain Currenta IDM 31 Linear Derating Factor 1.5 W/°C Single Pulse Avalanche Energyb EAS 770 mJ Repetitive Avalanche Currenta IAR 7.8 A Repetitive Avalanche Energya EAR 19 mJ Maximum Power Dissipation TC = 25 °C PD 190 W Peak Diode Recovery dV/dtc dV/dt 2.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m |
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Product Tags: npn smd transistor silicon power transistors |