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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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2N7002DW-7-F DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

2N7002DW-7-F DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Brand Name DIODES
Model Number 2N7002DW-7-F
Certification Original Factory Pack
Place of Origin Original
Minimum Order Quantity 50pcs
Price negotiation
Payment Terms T/T, Western Union,PayPal
Supply Ability 5200PCS
Delivery Time 1 day
Packaging Details please contact me for details
Description Mosfet Array 60V 230mA 310mW Surface Mount SOT-363
Drain-Source Voltage 60 V
Drain-Gate Voltage RGS ≤ 1.0MΩ 60 V
Junction and Storage Temperature Range -55 to +150 °C
ID 115 mA
PD 900mW
Detailed Product Description

2N7002DW-7-F DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant

 

 

 

 

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted

Symbol Parameter Value Units
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage RGS ≤ 1.0MΩ 60  V
VGSS

Gate-Source Voltage                             Continuous

                                                              Continuous @ 100°C

                                                              Pulsed

115

73

800

mA
TJ , TSTGJunction and Storage Temperature Range-55 to +150°C
    

 

 

 

 

 

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Product Tags: power mosfet ic   silicon power transistors  
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