2N7002DW-7-F DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Brand Name	DIODES
Model Number	2N7002DW-7-F
Certification	Original Factory Pack
Place of Origin	Original
Minimum Order Quantity	50pcs
Price	negotiation
Payment Terms	T/T, Western Union,PayPal
Supply Ability	5200PCS
Delivery Time	1 day
Packaging Details	please contact me for details
Description	Mosfet Array 60V 230mA 310mW Surface Mount SOT-363
Drain-Source Voltage	60 V
Drain-Gate Voltage RGS ≤ 1.0MΩ	60 V
Junction and Storage Temperature Range	-55 to +150 °C
ID	115 mA
PD	900mW

Detailed Product Description

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant

Absolute Maximum Ratings * Ta = 25°C unless otherwise noted

Symbol	Parameter	Value	Units
VDSS	Drain-Source Voltage	60	V
VDGR	Drain-Gate Voltage RGS ≤ 1.0MΩ	60	V
VGSS	Gate-Source Voltage Continuous Continuous @ 100°C Pulsed	115 73 800	mA
TJ , TSTG	Junction and Storage Temperature Range	-55 to +150	°C

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Product Tags: power mosfet ic silicon power transistors

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