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high power pnp transistor
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AOD424G 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low R DS(ON) • RoHS and Halogen-Free Compliant Application • DC/DC ...
2024-12-09 21:52:33
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AOD442G 60V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free ...
2024-12-09 21:52:33
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AOD478/AOI478 100V N-Channel MOSFET General Description The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to ...
2024-12-09 21:52:33
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Electronic Component AP2308GEN SOT-23 Advantage Price For Original Stock Description Advanced Power MOSFETs utilized advanced processing techniques to ...
2024-12-09 21:52:33
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...Transistors TIP112 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation ...
2024-12-09 18:42:28
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...Transistors TIP112 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation ...
2024-12-09 21:52:33
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...-Encapsulate MOSFETS HXY3400 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on)
2024-12-09 18:42:28
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...-Encapsulate MOSFETS HXY3404 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on)
2024-12-09 18:42:28
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...-Encapsulate MOSFETS HXY3400 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on)
2024-12-09 21:52:33
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...-Encapsulate MOSFETS HXY3404 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on)
2024-12-09 21:52:33
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