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high power pnp transistor
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MMBD4148A/SE/CC/CA SWITCHING DIODE SOT-23 Plastic-Encapsulated Diodes FEATURE Fast Switching Speed For General Purpose Switching Applications High ...
2024-12-09 18:42:28
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... RDS(ON) Low Gate Charge Applications High efficiency power supply Secondary synchronus rectifier Electrical Characteristics (T =25°C unless ...
2024-12-09 18:42:28
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AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate ...
2024-12-09 19:03:13
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20G04S 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge ...
2024-12-09 21:52:33
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HXY4606 30V Complementary MOSFET Description The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The ...
2024-12-09 21:52:33
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AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate ...
2024-12-09 21:52:33
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MMBD4148A/SE/CC/CA SWITCHING DIODE SOT-23 Plastic-Encapsulated Diodes FEATURE Fast Switching Speed For General Purpose Switching Applications High ...
2024-12-09 21:52:33
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... RDS(ON) Low Gate Charge Applications High efficiency power supply Secondary synchronus rectifier Electrical Characteristics (T =25°C unless ...
2024-12-09 21:52:33
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...POWER MOSFET DESCRIPTION The UTC 10N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, ...
2024-12-09 18:45:20
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...POWER MOSFET DESCRIPTION The UTC 10N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, ...
2024-12-09 21:52:33
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