20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET
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Detailed Product Description
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20G04S 40V N+P-Channel Enhancement Mode MOSFET
Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications
General Features N-Channel VDS =40V,ID =20A RDS(ON) < 35mΩ @ VGS=10V RDS(ON) < 42mΩ @ VGS=4.5V P-Channel VDS =-40V,ID = -18A RDS(ON) <40mΩ @ VGS=-10V RDS(ON) < 70mΩ @ VGS=-4.5V High power and current handing capability Lead free product is acquired Surface mount package
Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
Package Marking and Ordering Information
Absolute Maximum Ratings (TC=25℃unless otherwise noted) N-CH Electrical Characteristics (TA=25℃unless otherwise noted)
P-CH Electrical Characteristics (TA=25℃unless otherwise noted) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction
temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production N-Channel Typical Characteristics P-Channel Typical Characteristics |
| Product Tags: n channel mosfet transistor high voltage transistor |
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