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Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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AP2322GN LOGIC ICS 0.833W 10A MOSFET Power Switch

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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AP2322GN LOGIC ICS 0.833W 10A MOSFET Power Switch

Brand Name Hua Xuan Yang
Model Number AP2322GN
Certification RoHS、SGS
Place of Origin China
Minimum Order Quantity Negotiable
Price Negotiate
Payment Terms L/C T/T Western Union
Supply Ability 10,000/Month
Delivery Time 4~5 week
Packaging Details Carton Box
Model Number: AP2322GN
Brand Name: original
State: Original new
Type: LOGIC ICS
Lead time In stock
D/C: Newest
Detailed Product Description

AP2322GN  Original General Purpose Power Transistor/MOSFET/Power Switch IC Chips

 

This product is sensitive to electrostatic discharge, please handle with care.

 

This product is not authorized to be used as a critical component of a life support system or other similar systems.

 

APEC shall not be liable for any liability arising from the application or use of any product or circuit described in this agreement, nor shall it assign any license under its patent rights or assign the rights of others.

 

APEC reserves the right to make changes to any product in this Agreement without notice to improve reliability, function or design.

 

Description

 

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

 

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

 

SymbolParameterRatingUnits
VDSDrain-Source Voltage20V
VGSGate-Source Voltage+8V
ID@TA=25℃Drain Current3, VGS @ 4.5V2.5A
ID@TA=70℃Drain Current3, VGS @ 4.5V2.0A
IDMPulsed Drain Current110A
PD@TA=25℃Total Power Dissipation0.833W
TSTGStorage Temperature Range-55 to 150
TJOperating Junction Temperature Range-55 to 150

 

Thermal Data

 

SymbolParameterValueUnit
Rthj-aMaximum Thermal Resistance, Junction-ambient3150℃/W

 

 AP2322G

 

Electrical Characteristics@Tj=25oC(unless otherwise specified)

SymbolParameterTest ConditionsMin.Typ.Max.Units
BVDSSDrain-Source Breakdown VoltageVGS=0V, ID=250uA20--V
RDS(ON)Static Drain-Source On-Resistance2VGS=4.5V, ID=1.6A--90mΩ
VGS=2.5V, ID=1A--120mΩ
VGS=1.8V, ID=0.3A--150mΩ
VGS(th)Gate Threshold VoltageVDS=VGS, ID=1mA0.25-1V
gfsForward TransconductanceVDS=5V, ID=2A-2-S
IDSSDrain-Source Leakage CurrentVDS=20V, VGS=0V--1uA
IGSSGate-Source LeakageVGS=+8V, VDS=0V--+100nA
QgTotal Gate Charge

ID=2.2A

VDS=16V VGS=4.5V

-711nC
QgsGate-Source Charge-0.7-nC
QgdGate-Drain ("Miller") Charge-2.5-nC
td(on)Turn-on Delay Time

VDS=10V ID=1A RG=3.3Ω

VGS=5V

-6-ns
trRise Time-12-ns
td(off)Turn-off Delay Time-16-ns
tfFall Time-4-ns
CissInput Capacitance

V.GS=0V VDS=20V

f=1.0MHz

-350560pF
CossOutput Capacitance-55-pF
CrssReverse Transfer Capacitance-48-pF
RgGate Resistancef=1.0MHz-3.24.8Ω

 

Source-Drain Diode

 

SymbolParameterTest ConditionsMin.Typ.Max.Units
VSDForward On Voltage2IS=0.7A, VGS=0V--1.2V
trrReverse Recovery Time

IS=2A, VGS=0V,

dI/dt=100A/µs

-20-ns
QrrReverse Recovery Charge-13-nC

 

Notes:

 

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 360 ℃/W when mounted on Min. copper pad.

Product Tags: 10A MOSFET Power Switch   0.833W MOSFET Power Switch   AP2322GN MOSFET Power Transistor  
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