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Drive IC AP2308GEN SOT-23 0.69W 3.6A Mosfet Power Transistor

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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Drive IC AP2308GEN SOT-23 0.69W 3.6A Mosfet Power Transistor

Brand Name Hua Xuan Yang
Model Number AP2308GEN
Certification RoHS、SGS
Place of Origin China
Minimum Order Quantity Negotiable
Price Negotiable
Payment Terms L/C T/T Western Union
Supply Ability 10,000/Month
Delivery Time 4~5 week
Packaging Details Boxed
Model Number: AP2308GEN
Condition: New and original
Type: Drive IC
Application: Electronic Products
D/C: NEW
Datasheet: Pls contact us
Detailed Product Description

Electronic Component AP2308GEN SOT-23 Advantage Price For Original Stock

 

Description

 

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device.

The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.

 

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

 

SymbolParameterRatingUnits
VDSDrain-Source Voltage20V
VGSGate-Source Voltage+8V
ID@TA=25℃Drain Current3, VGS @ 4.5V1.2A
ID@TA=70℃Drain Current3, VGS @ 4.5V1A
IDMPulsed Drain Current13.6A
PD@TA=25℃Total Power Dissipation0.69W
TSTGStorage Temperature Range-55 to 150
TJOperating Junction Temperature Range-55 to 150

 

Thermal Data

 

SymbolParameterValueUnit
Rthj-aMaximum Thermal Resistance, Junction-ambient3180℃/W

 

AP2308GE

 

Electrical Characteristics@Tj=25oC(unless otherwise specified)

 

SymbolParameterTest ConditionsMin.Typ.Max.Units
BVDSSDrain-Source Breakdown VoltageVGS=0V, ID=250uA20--V
RDS(ON)Static Drain-Source On-Resistance2VGS=4.5V, ID=1.2A--600
VGS=2.5V, ID=0.3A--2Ω
VGS(th)Gate Threshold VoltageVDS=VGS, ID=250uA0.5-1.25V
gfsForward TransconductanceVDS=5V, ID=1.2A-1-S
IDSSDrain-Source Leakage CurrentVDS=20V, VGS=0V--1uA
IGSSGate-Source LeakageVGS=+8V, VDS=0V--+30uA
QgTotal Gate Charge

ID=1.2A VDS=16V

VGS=4.5V

-1.22nC
QgsGate-Source Charge-0.4-nC
QgdGate-Drain ("Miller") Charge-0.3-nC
td(on)Turn-on Delay Time

VDS=10V ID=1.2A RG=3.3Ω

VGS=5V

-17-ns
trRise Time-36-ns
td(off)Turn-off Delay Time-76-ns
tfFall Time-73-ns
CissInput Capacitance

VGS=0V

.VDS=10V

f=1.0MHz

-3760pF
CossOutput Capacitance-17-pF
CrssReverse Transfer Capacitance-13-pF

 

Source-Drain Diode

 

SymbolParameterTest ConditionsMin.Typ.Max.Units
VSDForward On Voltage2IS=1.2A, VGS=0V--1.2V

 

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 400℃/W when mounted on min. copper pad.

 

Items:New AP2308GEN

Part number: AP2308GEN

Package: Electronic components

Electronic Components: AP2308GEN

 

Thanks to choose our product extremely.

We will provide you with the best quality and most cost-effective products.

Our aim is to perfect the product quality for a long-time business.

So, please rest assured to choose, please contact us if have any questions.

Product Tags: SOT-23 Mosfet Power Transistor   3.6A Mosfet Power Transistor   0.69W MOSFET Transistor  
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