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high power pnp transistor
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...Transistor With Low On State Resistance Mos Field Effect Transistor Feature -60V/-40A R DS(ON) = 19mΩ(typ.)@V GS = -10V R DS(ON) = 25mΩ(typ.)@V GS ...
2024-12-09 18:50:53
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...Transistor With Low On State Resistance Mos Field Effect Transistor Feature -60V/-40A R DS(ON) = 19mΩ(typ.)@V GS = -10V R DS(ON) = 25mΩ(typ.)@V GS ...
2024-12-09 21:52:33
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... technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side ...
2024-12-09 18:42:28
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... technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side ...
2024-12-09 21:52:33
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SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 mΩ@ 4.5V 5.0 A < VGS = z RDS(on) < mΩ@VGS = 2.5V 40 z z 20 40 z RDS...
2024-12-09 18:42:28
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SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 mΩ@ 4.5V 5.0 A < VGS = z RDS(on) < mΩ@VGS = 2.5V 40 z z 20 40 z RDS...
2024-12-09 21:52:33
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Enhancement Mode N Channel Transistor / Logic Mosfet Switch Surface Mount Package N Channel Transistor Description The 18N20X uses advanced Plane ...
2024-12-09 18:45:55
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Enhancement Mode N Channel Transistor / Logic Mosfet Switch Surface Mount Package N Channel Transistor Description The 18N20X uses advanced Plane ...
2024-12-09 21:52:33
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... a level shifted high side switch, and for a host of other applicatio Application ● Power switching application ● Hard Switched and High Frequency ...
2024-12-09 18:42:28
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... a level shifted high side switch, and for a host of other applicatio Application ● Power switching application ● Hard Switched and High Frequency ...
2024-12-09 21:52:33
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