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high power pnp transistor
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AOD480 30V N-Channel MOSFET General Description The AOD480 uses advanced trench technology and design to provide excellent R DS(ON) with low gate ...
2024-12-09 19:03:13
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AOD480 30V N-Channel MOSFET General Description The AOD480 uses advanced trench technology and design to provide excellent R DS(ON) with low gate ...
2024-12-09 21:52:33
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme...
2024-12-09 18:42:28
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BAV19W~BAV21W SWITCHINGDIODESOD-123 SOD-123Plastic-EncapsulateDiodes FEATURE Low Reverse Current Surface Mount Package Ideally Suited for Automatic ...
2024-12-09 18:42:28
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme...
2024-12-09 21:52:33
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BAV19W~BAV21W SWITCHINGDIODESOD-123 SOD-123Plastic-EncapsulateDiodes FEATURE Low Reverse Current Surface Mount Package Ideally Suited for Automatic ...
2024-12-09 21:52:33
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60V N-Channel AlphaSGT HXY4264 Product Summary VDS (V) = 30V I = 18A D RDS(ON) < 11m Ω (VGS = 10V) RDS(ON) < 19m Ω (VGS = 4.5V) General Description ...
2024-12-09 18:42:28
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SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET Product Summary ID= 6.0 A VDSS=20v RDS(on)
2024-12-09 18:42:28
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SOT-23 Plastic-Encapsulate MOSFETS 2N7002 Product Summary ID= 6.0 A VDSS=20v RDS(on)
2024-12-09 18:42:28
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60V N-Channel AlphaSGT HXY4264 Product Summary VDS (V) = 30V I = 18A D RDS(ON) < 11m Ω (VGS = 10V) RDS(ON) < 19m Ω (VGS = 4.5V) General Description ...
2024-12-09 21:52:33
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