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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
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high power pnp transistor

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HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET Product Summary ID= 6.0 A VDSS=20v RDS(on) 2024-12-09 21:52:33

2N7002 Enhancement Mode Field Effect Transistor VDSS 20v ID 6.0 A

SOT-23 Plastic-Encapsulate MOSFETS 2N7002 Product Summary ID= 6.0 A VDSS=20v RDS(on) 2024-12-09 21:52:33

HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v

HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme... 2024-12-09 18:42:28

HXY4616 Mosfet Power Transistor ±20v VGS High Voltage VDS 40V VGS ±20v

HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme... 2024-12-09 21:52:33

TO-220-3L TIP117 Semiconductor Triode High DC Current Gain Collector Current -2A

...Transistors TIP117 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain Low Collector-Emitter Saturation Voltage Complementary to TIP112 ... 2024-12-09 18:42:28

TO-220-3L TIP117 Semiconductor Triode High DC Current Gain Collector Current -2A

...Transistors TIP117 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain Low Collector-Emitter Saturation Voltage Complementary to TIP112 ... 2024-12-09 21:52:33

NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET

NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET 2024-12-09 18:45:20

NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET

NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET 2024-12-09 21:52:33

AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

60V N-Channel AlphaSGT HXY4266 Product Summary VDS 60V ID (at VGS=10V) 11A RDS(ON) (at VGS=10V) < 13.5mΩ RDS(ON) (at VGS=4.5V) < 18mΩ General ... 2024-12-09 18:42:28

HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS=10V) < 11.5mΩ RDS(ON) (at VGS = 4.5V) < 15.5mΩ General ... 2024-12-09 18:42:28

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