Custom Made Mos Field Effect Transistor With Low On State Resistance

Custom Made Mos Field Effect Transistor With Low On State Resistance

Mos Field Effect Transistor  Feature

-60V/-40A
R DS(ON) = 19mΩ(typ.)@V GS = -10V
R DS(ON) = 25mΩ(typ.)@V GS = -4.5V
100% avalanche tested
Reliable and Rugged
Halogen Free and Green Devices Available
(RoHS Compliant)

Mos Field Effect Transistor  Applications

Power Management in DC/DC converter.

Load switching.

Motor control.

Ordering and Marking Information

D                                                     U                           V

G210P06                               G210P06                  G210P06

XYWXXXXXX                     XYWXXXXXX           XYWXXXXXX

Package Code

D: TO-252-2L U: TO-251-3L V:TO-251-3S

Date Code

XYMXXXXXX

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.

Absolute Maximum Ratings