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TIP112 Field Effect Transistor , High Frequency Transistor

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee View Contact Details

Place of Origin	ShenZhen China
Brand Name	Hua Xuan Yang
Certification	RoHS、SGS
Minimum Order Quantity	1000-2000 PCS
Price	Negotiated
Packaging Details	Boxed
Delivery Time	1 - 2 Weeks
Payment Terms	L/C T/T Western Union
Supply Ability	18,000,000PCS / Per Day
Model Number	TIP112
Product ID	TIP112
Feature	Low Collector Emitter Saturation Voltage
Collector Power Dissipation	2w
Junction Temperature	150℃
Collector-Base Voltage	100v
Emitter-Base Voltage	5v

Detailed Product Description

TO-220-3L Plastic-Encapsulate Transistors TIP112 DARLINGTON TRANSISTOR (NPN)

FEATURE

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	100	V
VCEO	Collector-Emitter Voltage	100	V
VEBO	Emitter-Base Voltage	5	V
I_C	Collector Current -Continuous	2	A
P_C	Collector Power Dissipation	2	W
T_J	Junction Temperature	150	℃
Tstg	Storage Temperature	-55 to +150	℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=10mA,I_E=0	100			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C=30mA,I_B=0^(SUS)	100			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=10mA,I_C=0	5			V
Collector cut-off current	ICEO	V_CE=50V,I_B=0			2	mA
Collector cut-off current	ICBO	V_CB=100V,I_E=0			1	mA
Emitter cut-off current	IEBO	V_EB=5V,I_C=0			2	mA
DC current gain	hFE(1)	V_CE=4V,I_C=1A	1000		12000
DC current gain	hFE(2)	V_CE=4V,I_C=2A	500
Collector-emitter saturation voltage	VCE(sat)	I_C=2A,I_B=8mA			2.5	V
Base-emitter voltage	VBE	V_CE=4V,I_C=2A			2.8	V
Collector output capacitance	Cob	V_CB=10V,I_E=0,f=0.1MHz			100	pF

TO-220-3L Package Outline Dimensions

Product Tags: electronic components triode semiconductor switch

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