91 - 100 of 173
to247 n channel power mosfet
Selling leads
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Small Signal MOSFET −8.0 V, −3.7 A, Single P−Channel, SOT−23 Features • Leading Trench Technology for Low RDS(on) • −1.8 V Rated for Low Voltage Gate ...
2024-12-09 22:41:27
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Stock Offer (Hot Sell) Part No. Quantity Brand D/C Package MCIMX535DVV1C 1066 FREESCALE 14+ BGA MCIMX6S7CVM08AC 769 FREESCALE 16+ BGA MCP100T-270I/TT ...
2024-12-09 22:41:27
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AON7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AON7403/L uses advanced trench technology to provide excellent RDS...
2024-12-09 22:38:51
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STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH™ IGBT General Features TYPE VCES VCE(sat) (Max) @25°C IC @100°C STGW20NC60VD 600 V < 2.5 ...
2024-12-09 22:38:51
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ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description The ISL9V3040D3S, ...
2024-12-09 22:38:51
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AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON...
2024-12-09 22:41:27
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BUK95/9608-55A TrenchMOS™ logic level FET Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ ...
2024-12-09 22:38:51
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STOCK List PM200RSA060 120 MITSUBISH 13+ MOUDLE MSM5219BGS-K-7 550 OKI 14+ QFP PS11003-C 500 MITSUBISH 12+ MODULE MB87020PF-G-BND 3531 FUJITSU 14+ QFP ...
2024-12-09 22:38:38
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Switching (200V, 10A) RDN100N20 Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. ...
2024-12-09 22:41:27
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IXFN38N100Q2 HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg , Low Intrinsic Rg High dV/dt, Low trr VDSS = ...
2024-12-09 22:43:31
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