IXFN38N100Q2 Mosfet Power Module thyristor diode module N-Channel MOSFET

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

IXFN38N100Q2 Mosfet Power Module thyristor diode module N-Channel MOSFET

Model Number	IXFN38N100Q2
Certification	new & original
Place of Origin	original factory
Minimum Order Quantity	10pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	6000pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	N-Channel 1000 V 38A (Tc) 890W (Tc) Chassis Mount SOT-227B
VDSS	1000 V
VDGR	1000 V
VGS	±30 V
VGSM	±40 V
PD	890 W
Weight	30 g

Detailed Product Description

IXFN38N100Q2

HiPerFET^TM Power MOSFET

N-Channel Enhancement Mode Avalanche Rated, Low Q_g , Low Intrinsic R_g High dV/dt, Low t_rr

V_DSS = 1000 V

I_D25 = 38 A

R_DS(on)= 0.25 Ω

t_rr ≤ 300 ns

Features

• Double metal process for low gate resistance

• miniBLOC, with Aluminium nitride isolation

• Unclamped Inductive Switching (UIS) rated

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Switched-mode and resonant-mode power supplies

• DC choppers

• Pulse generators

Advantages

• Easy to mount

• Space savings

• High power density

Maximum Ratings

Symbol	Test Conditions	MAX.	UNIT
V_DSS	T_J = 25°C to 150°C	1000	V
V_DGR	T_J = 25°C to 150°C; R_GS = 1 MΩ	1000	V
V_GS	Continuous	±30	V
V_GSM	Transient	±40	V
I_D25	T_C = 25°C	38	A
I_DM	T_C = 25°C, pulse width limited by T_JM	152	A
I_AR	T_C = 25°C	38	A
E_AR	T_C = 25°C	60	mJ
E_AS	T_C = 25°C	5.0	J
dv/dt	I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS T_J ≤ 150°C, R_G = 2 Ω	20	V/ns
P_D	T_C = 25°C	890	W
T_J		-55 ... +150	°C
T_JM		150	°C
T_stg		-55 ... +150	°C
V_ISOL	50/60 Hz, RMS, t = 1 minute	2500	V
M_d	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.

Stock Offer (Hot Sell)

Part no.

Quantity

Brand

D/C

Package

SN74HC00DR	4211	TI	15+	SOP14
NDS9956A	4215	FAIRCHILD	16+	SOP8
MC33202DR2G	4227	ON	16+	SOP8
ICE2B265	4250		14+	DIP-8
SS32-E3/57T	4250	VISHAY	14+	DO214
SI3867	4258	VISHAY	14+	SOT-163
APM4953	4275	APM	16+	SOP8
LM1117MPX-5.0	4288	NS	16+	SOT223
3224W-1-103E	4300	BOURNS	13+	SMD
TNY276GN	4300	POWER	15+	SOP-7
MIC5235-1.8YM5	4300	MICREL	16+	SOT23-5
HCF4052BEY	4399	ST	16+	DIP
M82C51A-2	4400	OKI	14+	DIP
MUR1620CTRG	4400	ON	14+	TO-220
IRF7329	4412	IR	14+	SOP-8
HSMP-3816	4433	AVAGO	16+	SOT153
SMDJ54CA	4440	LITTELFUS	16+	SMD
GP1A51HR	4444	SHARP	13+	DIP-4
P2804BDG	4444	NIKO	15+	TO252
AP9962GH	4450	AP	16+	TO-252
AD1955ARSZ	4457	AD	16+	SSOP-28
AMS1083CT-3.3	4470	AMS	14+	TO-220
1N4747A	4500	ST	14+	DO-41
FDB8447L	4500	FSC	14+	TO-263
INA118P	4500	TI	16+	DIP-8
IRFR9024NTRPBF	4500	IR	16+	TO-252
NL17SZ06	4500	ON	13+	SOT553
Q6040K7	4500	LITTELFUS	15+	TO-3P
STM8324	4500	SAMHOP	16+	SOP8
TDA2050	4500	ST	16+	ZIP

Product Tags: thyristor diode module low voltage power mosfet

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