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AO3400A Power Mosfet Transistor N-Channel Enhancement Mode Field Effect Transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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AO3400A Power Mosfet Transistor N-Channel Enhancement Mode Field Effect Transistor

Brand Name ALPHA
Model Number AO3400A
Certification Original Factory Pack
Place of Origin 100% new & original
Minimum Order Quantity 100pcs
Price negotiation
Payment Terms T/T, Western Union,Payapl
Supply Ability 6000PCS
Delivery Time 1 Day
Packaging Details please contact me for details
Description N-Channel 30 V 5.7A (Ta) 1.4W (Ta) Surface Mount SOT-23-3
Drain-Source Voltage 30 V
Gate-Source Voltage ±12 V
Pulsed Drain Current B 25 A
Continuous Drain TA=25°C
Junction and Storage Temperature Range -55 to 150°C
Detailed Product Description

AO3400A

N-Channel Enhancement Mode Field Effect Transistor

 

General Description

The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications).

 

 

Features

VDS (V) = 30V

 

ID = 5.7A (VGS = 10V)

 

RDS(ON) < 26.5mΩ (VGS = 10V)

 

RDS(ON) < 32mΩ (VGS = 4.5V)

 

RDS(ON) < 48mΩ (VGS = 2.5V)

 

 

 

 

Thermal Characteristics
ParameterSymbolTyp MaxUnits
Maximum Junction-to-Ambient At ≤ 10sRθJA7090°C/W
Maximum Junction-to-Ambient ASteady-State100125°C/W
Maximum Junction-to-Lead CSteady-StateRθJL6380°C/W

 

Product Tags: power mosfet ic   silicon power transistors  
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