AO3400A Power Mosfet Transistor N-Channel Enhancement Mode Field Effect Transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

AO3400A Power Mosfet Transistor N-Channel Enhancement Mode Field Effect Transistor

Brand Name	ALPHA
Model Number	AO3400A
Certification	Original Factory Pack
Place of Origin	100% new & original
Minimum Order Quantity	100pcs
Price	negotiation
Payment Terms	T/T, Western Union,Payapl
Supply Ability	6000PCS
Delivery Time	1 Day
Packaging Details	please contact me for details
Description	N-Channel 30 V 5.7A (Ta) 1.4W (Ta) Surface Mount SOT-23-3
Drain-Source Voltage	30 V
Gate-Source Voltage	±12 V
Pulsed Drain Current B	25 A
Continuous Drain	TA=25°C
Junction and Storage Temperature Range	-55 to 150°C

Detailed Product Description

AO3400A

N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications).

Features

VDS (V) = 30V

ID = 5.7A (VGS = 10V)

RDS(ON) < 26.5mΩ (VGS = 10V)

RDS(ON) < 32mΩ (VGS = 4.5V)

RDS(ON) < 48mΩ (VGS = 2.5V)

Thermal Characteristics
Parameter		Symbol	Typ	Max	Units
Maximum Junction-to-Ambient ^A	t ≤ 10s	R_θJA	70	90	°C/W
Maximum Junction-to-Ambient ^A	Steady-State	R_θJA	100	125	°C/W
Maximum Junction-to-Lead ^C	Steady-State	R_θJL	63	80	°C/W

Product Tags: power mosfet ic silicon power transistors

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