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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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silicon npn power transistors

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CoolMOSTM Power Transistor Features PG-TO247 • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low ...... 2024-12-09 22:38:38
...Power Transistor 110 A, STripFET F6 Power MOSFET in a TO-220 package Features Order code VDS RDS(on)max ID PTOT STP110N8F6 80 V 0.0065 Ω 110 A 200 ... 2024-12-09 22:37:47
...Power Transistor MOSFET 30V N Channel NexFET Power MOSFET 1 Features Optimized for 5-V Gate Drive Ultra-Low Qg and Qgd Low Thermal Resistance Pb... 2024-12-09 22:37:47
...Power Transistor MOSFET 40V N-Channel NexFET Power MOSFET 1 Features Ultra low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb ... 2024-12-09 22:37:47
... Efficiencies Up To 96% Wide-Output Voltage Adjust 0.6 V to 5.5 V, with 1% Reference Accuracy Supports Parallel Operation for Higher Current ... 2024-12-09 22:37:47
2SB1316TL Power Transistor low power mosfet switching power mosfet] Features 1) DarliCM GROUPon connection for high DC current gain. 2) Built-in ... 2024-12-09 22:38:51
MJD122G Complementary DarliCM GROUPon Power Transistor switching power mosfet low power mosfet Designed for general purpose amplifier and low speed ... 2024-12-09 22:41:27
FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free ... 2024-12-09 22:38:38
... Synchronous Rectifier for Offline and Isolated DC- DC Converters Motor Control 3 Description This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFETTM power ... 2024-12-09 22:37:47
...Power Transistor MOSFET -30V P-Channel Power Trench Features Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A Max r = 18 mΩ at V = -4.5 V, I = -8.5 ... 2024-12-09 22:37:47
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