CSD19532Q5B Mosfet Power Transistor 100V 4.0 MOhm N-Ch NexFET

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

100

V

Qg

Gate Charge Total (10 V)

48

nC

Qgd

Gate Charge Gate to Drain

8.7

nC

RDS(on)

Drain-to-Source On Resistance

VGS = 6 V

4.6

mΩ

VGS =10V

4

mΩ

VGS(th)

Threshold Voltage

2.6

V

Device

Media

Qty

Package

Ship

CSD19532Q5B

13-Inch Reel

2500

SON 5 x 6 mm Plastic Package

Tape and Reel

CSD19532Q5BT

13-Inch Reel

250

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

100

V

VGS

Gate-to-Source Voltage

±20

V

ID

Continuous Drain Current (Package limited)

100

A

Continuous Drain Current (Silicon limited), TC = 25°C

140

Continuous Drain Current(1)

17

IDM

Pulsed Drain Current(2)

400

A

PD

Power Dissipation(1)

3.1

W

Power Dissipation, TC = 25°C

195

TJ, Tstg

Operating Junction and Storage Temperature Range

–55 to 150

°C

EAS

Avalanche Energy, single pulse ID =74A,L=0.1mH,RG =25Ω

274

mJ