China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
3
Home > Products > Flash Memory IC Chip >

CSD19532Q5B Mosfet Power Transistor 100V 4.0 MOhm N-Ch NexFET

Browse Categories

ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
View Contact Details

CSD19532Q5B Mosfet Power Transistor 100V 4.0 MOhm N-Ch NexFET

Brand Name Ti
Model Number CSD19532Q5B
Minimum Order Quantity Contact us
Price Contact us
Payment Terms Paypal, Western Union, TT
Supply Ability 50000 Pieces per Day
Delivery Time The goods will be shipped within 3 days once received fund
Packaging Details VSON8
Description N-Channel 100 V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6)
Channel Mode Enhancement
Configuration Single
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation Pd - Power Dissipation
Detailed Product Description

CSD19532Q5B Mosfet Power Transistor MOSFET 100V 4.0 mOhm N-Ch NexFET Power MOSFET

 

1 Features

  • Low Thermal Resistance

  • Avalanche Rated

  • Pb-Free Terminal Plating

  • RoHS Compliant

  • Halogen Free

  • SON 5-mm × 6-mm Plastic Package

     

2 Applications

  • Synchronous Rectifier for Offline and Isolated DC- DC Converters

  • Motor Control

     

3 Description

This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFETTM power MOSFET is designed to minimize losses in power conversion applications.

 

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

100

V

Qg

Gate Charge Total (10 V)

48

nC

Qgd

Gate Charge Gate to Drain

8.7

nC

RDS(on)

Drain-to-Source On Resistance

VGS = 6 V

4.6

VGS =10V

4

VGS(th)

Threshold Voltage

2.6

V

 

Ordering Information(1)

Device

Media

Qty

Package

Ship

CSD19532Q5B

13-Inch Reel

2500

SON 5 x 6 mm Plastic Package

Tape and Reel

CSD19532Q5BT

13-Inch Reel

250

 

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

100

V

VGS

Gate-to-Source Voltage

±20

V

ID

Continuous Drain Current (Package limited)

100

A

Continuous Drain Current (Silicon limited), TC = 25°C

140

Continuous Drain Current(1)

17

IDM

Pulsed Drain Current(2)

400

A

PD

Power Dissipation(1)

3.1

W

Power Dissipation, TC = 25°C

195

TJ, Tstg

Operating Junction and Storage Temperature Range

–55 to 150

°C

EAS

Avalanche Energy, single pulse ID =74A,L=0.1mH,RG =25Ω

274

mJ

Product Tags: p channel mosfet driver circuit   mosfet motor control circuit  
Related Products
Email to this supplier
 
From:
Enter your Email please.
To: ChongMing Group (HK) Int'l Co., Ltd
Subject:
Message:
Characters Remaining: (80/3000)